Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique
Nanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering. The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2014-04-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_102605_2da59aa64842727151d0ca97c99d8954.pdf |
| _version_ | 1797325719558160384 |
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| author | Mohammed K. Khalaf Saba N. Said Ameen J. Abbas |
| author_facet | Mohammed K. Khalaf Saba N. Said Ameen J. Abbas |
| author_sort | Mohammed K. Khalaf |
| collection | DOAJ |
| description | Nanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering. The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current of (15-30) mA when annealed at 500 0C for 2 h. The optical energy gap for the prepared films is estimated to be in (2.05- 2.3) eV range. It was found that the effect of preparation conditions on thin films thickness strongly depends on the discharge current of argon plasma. |
| first_indexed | 2024-03-08T06:13:30Z |
| format | Article |
| id | doaj.art-6e7dd794854045ce849ab395546a981b |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:13:30Z |
| publishDate | 2014-04-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-6e7dd794854045ce849ab395546a981b2024-02-04T17:30:33ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582014-04-01324B77077610.30684/etj.32.4B.17102605Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering TechniqueMohammed K. KhalafSaba N. SaidAmeen J. AbbasNanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering. The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current of (15-30) mA when annealed at 500 0C for 2 h. The optical energy gap for the prepared films is estimated to be in (2.05- 2.3) eV range. It was found that the effect of preparation conditions on thin films thickness strongly depends on the discharge current of argon plasma.https://etj.uotechnology.edu.iq/article_102605_2da59aa64842727151d0ca97c99d8954.pdf |
| spellingShingle | Mohammed K. Khalaf Saba N. Said Ameen J. Abbas Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique Engineering and Technology Journal |
| title | Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique |
| title_full | Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique |
| title_fullStr | Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique |
| title_full_unstemmed | Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique |
| title_short | Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique |
| title_sort | characterization of the copper oxide thin films deposited by dc sputtering technique |
| url | https://etj.uotechnology.edu.iq/article_102605_2da59aa64842727151d0ca97c99d8954.pdf |
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