Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Abstract Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with th...

Full description

Bibliographic Details
Main Authors: Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Gallium nitride
Heterostructure
IR reflectance
Transfer matrix method
Carrier concentration
Mobility
Online Access:http://link.springer.com/article/10.1186/s11671-017-2171-0

Internet

http://link.springer.com/article/10.1186/s11671-017-2171-0

Similar Items