Laser-Patterned Alumina Mask and Mask-Less Dry Etch of Si for Light Trapping with Photonic Crystal Structures

Laser-Patterned Alumina Mask and Mask-Less Dry Etch of Si for Light Trapping with Photonic Crystal Structures

Ultra-short 230 fs laser pulses of a 515 nm wavelength were tightly focused onto 700 nm focal spots and utilised in opening ∼0.4–1 μm holes in alumina Al<sub>2</sub>O<sub>3</sub> etch masks with a 20–50 nm thickness. Such dielectric masks simplify the fabrication of photonic...

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Bibliographic Details
Main Authors: Jovan Maksimovic, Haoran Mu, Daniel Smith, Tomas Katkus, Mantas Vaičiulis, Ramūnas Aleksiejūnas, Gediminas Seniutinas, Soon Hock Ng, Saulius Juodkazis
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Micromachines
Subjects:
light trapping
Si solar cells
ablation
dry etch
Lambertian limit
Online Access:https://www.mdpi.com/2072-666X/14/3/550

Internet

https://www.mdpi.com/2072-666X/14/3/550

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