High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Abstract In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature eff...

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Bibliographic Details
Main Authors: Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2020-05-01
Series:Nanoscale Research Letters
Subjects:
Nitride
High electron mobility transistor
Double channel
AlGaN channel
Breakdown
Online Access:http://link.springer.com/article/10.1186/s11671-020-03345-6

Internet

http://link.springer.com/article/10.1186/s11671-020-03345-6

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