Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing
In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled race...
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MDPI AG
2015-06-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/15/6/13548 |
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| author | Benedetto Troia Ali Z. Khokhar Milos Nedeljkovic Scott A. Reynolds Youfang Hu Goran Z. Mashanovich Vittorio M. N. Passaro |
| author_facet | Benedetto Troia Ali Z. Khokhar Milos Nedeljkovic Scott A. Reynolds Youfang Hu Goran Z. Mashanovich Vittorio M. N. Passaro |
| author_sort | Benedetto Troia |
| collection | DOAJ |
| description | In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved. |
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| id | doaj.art-6ea94574a453473eaac79593fb29f535 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-12-10T06:23:07Z |
| publishDate | 2015-06-01 |
| publisher | MDPI AG |
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| spelling | doaj.art-6ea94574a453473eaac79593fb29f5352022-12-22T01:59:16ZengMDPI AGSensors1424-82202015-06-01156135481356710.3390/s150613548s150613548Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index SensingBenedetto Troia0Ali Z. Khokhar1Milos Nedeljkovic2Scott A. Reynolds3Youfang Hu4Goran Z. Mashanovich5Vittorio M. N. Passaro6Department of Electrical and Information Engineering, Politecnico di Bari, Via E. Orabona 4, 70125 Bari, ItalyOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKDepartment of Electrical and Information Engineering, Politecnico di Bari, Via E. Orabona 4, 70125 Bari, ItalyIn this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.http://www.mdpi.com/1424-8220/15/6/13548integrated waveguide sensorsoptical sensingVernier effectsilicon |
| spellingShingle | Benedetto Troia Ali Z. Khokhar Milos Nedeljkovic Scott A. Reynolds Youfang Hu Goran Z. Mashanovich Vittorio M. N. Passaro Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing Sensors integrated waveguide sensors optical sensing Vernier effect silicon |
| title | Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing |
| title_full | Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing |
| title_fullStr | Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing |
| title_full_unstemmed | Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing |
| title_short | Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing |
| title_sort | design procedure and fabrication of reproducible silicon vernier devices for high performance refractive index sensing |
| topic | integrated waveguide sensors optical sensing Vernier effect silicon |
| url | http://www.mdpi.com/1424-8220/15/6/13548 |
| work_keys_str_mv | AT benedettotroia designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT alizkhokhar designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT milosnedeljkovic designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT scottareynolds designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT youfanghu designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT goranzmashanovich designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing AT vittoriomnpassaro designprocedureandfabricationofreproduciblesiliconvernierdevicesforhighperformancerefractiveindexsensing |