A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers

On the strained silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), we show how to derive a formalism dealing with the scattering of a 2-D electron by a neutral defect. The corresponding neutral defect limited inversion-layer electron mobility, &#x03BC;<sub>n</sub>,...

Full description

Bibliographic Details
Main Authors: Shang-Hsun Hsieh, Ming-Jer Chen
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7829294/