A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers
On the strained silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), we show how to derive a formalism dealing with the scattering of a 2-D electron by a neutral defect. The corresponding neutral defect limited inversion-layer electron mobility, μ<sub>n</sub>,...
Main Authors: | , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7829294/ |