The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

We report the improvement of the electrical performance of field effect transistors (FETs) fabricated on monolayer chemical vapor deposited (CVD) MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF). The electrical characterizations of more than 60 FETs, after applying Teflon-AF...

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Bibliographic Details
Main Authors: Somayyeh Rahimi, Rudresh Ghosh, Seohee Kim, Ananth Dodabalapur, Sanjay Banerjee, Deji Akinwande
Format: Article
Language:English
Published: MDPI AG 2016-08-01
Series:Applied Sciences
Subjects:
transition metal dichalcogenides
2-Dimensional materials
molybdenum disulfide
chemical vapor deposition
field effect transistors
fluoropolymer
passivation
Online Access:http://www.mdpi.com/2076-3417/6/9/236

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http://www.mdpi.com/2076-3417/6/9/236

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