Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility

Abstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a...

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Bibliographic Details
Main Authors: Lulu Chou, Yan Liu, Yang Xu, Yue Peng, Huan Liu, Xiao Yu, Genquan Han, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2021-08-01
Series:Nanoscale Research Letters
Subjects:
Germanium
ZrO2
MOSFET
CMOS
Mobility
Online Access:https://doi.org/10.1186/s11671-021-03577-0

Internet

https://doi.org/10.1186/s11671-021-03577-0

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