Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Abstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2021-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03577-0 |
| _version_ | 1827842191071903744 |
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| author | Lulu Chou Yan Liu Yang Xu Yue Peng Huan Liu Xiao Yu Genquan Han Yue Hao |
| author_facet | Lulu Chou Yan Liu Yang Xu Yue Peng Huan Liu Xiao Yu Genquan Han Yue Hao |
| author_sort | Lulu Chou |
| collection | DOAJ |
| description | Abstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μ eff) of 682 cm2/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Q inv). On the other hand, the O3 post-treatment with Al2O3 interfacial layer can provide dramatically enhanced-μ eff, achieving about 50% μ eff improvement as compared to the Si universal mobility at medium Q inv of 5 × 1012 cm−2. These results indicate the potential utilization of ZrO2 dielectric in high-performance Ge nMOSFETs. |
| first_indexed | 2024-03-12T08:04:55Z |
| format | Article |
| id | doaj.art-6f1025f4352045538281195eb86d2f2a |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:04:55Z |
| publishDate | 2021-08-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-6f1025f4352045538281195eb86d2f2a2023-09-02T19:38:13ZengSpringerOpenNanoscale Research Letters1556-276X2021-08-011611610.1186/s11671-021-03577-0Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved MobilityLulu Chou0Yan Liu1Yang Xu2Yue Peng3Huan Liu4Xiao Yu5Genquan Han6Yue Hao7State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityIntelligent Chip Research Center, Zhejiang LabState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityAbstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μ eff) of 682 cm2/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Q inv). On the other hand, the O3 post-treatment with Al2O3 interfacial layer can provide dramatically enhanced-μ eff, achieving about 50% μ eff improvement as compared to the Si universal mobility at medium Q inv of 5 × 1012 cm−2. These results indicate the potential utilization of ZrO2 dielectric in high-performance Ge nMOSFETs.https://doi.org/10.1186/s11671-021-03577-0GermaniumZrO2MOSFETCMOSMobility |
| spellingShingle | Lulu Chou Yan Liu Yang Xu Yue Peng Huan Liu Xiao Yu Genquan Han Yue Hao Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility Nanoscale Research Letters Germanium ZrO2 MOSFET CMOS Mobility |
| title | Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility |
| title_full | Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility |
| title_fullStr | Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility |
| title_full_unstemmed | Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility |
| title_short | Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility |
| title_sort | ge n channel mosfets with zro2 dielectric achieving improved mobility |
| topic | Germanium ZrO2 MOSFET CMOS Mobility |
| url | https://doi.org/10.1186/s11671-021-03577-0 |
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