High-Frequency and High-Power Performance of <i>n</i>-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

High-Frequency and High-Power Performance of <i>n</i>-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

The <i>n</i>-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two tempe...

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Bibliographic Details
Main Authors: Roman M. Balagula, Liudvikas Subačius, Justinas Jorudas, Vytautas Janonis, Pawel Prystawko, Mikolaj Grabowski, Irmantas Kašalynas
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
gallium nitride with low electron density
shallow silicon impurity
low-field electron mobility
electrical performance
strong pulsed electric field
Online Access:https://www.mdpi.com/1996-1944/15/6/2066

Internet

https://www.mdpi.com/1996-1944/15/6/2066

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