Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is...

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Bibliographic Details
Main Authors: Jun-Kyo Jeong, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, Ga-Won Lee
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Micromachines
Subjects:
SONOS
flash memory
poly silicon
roughness
data retention
atomic force microscope (AFM)
Online Access:https://www.mdpi.com/2072-666X/12/11/1401

Internet

https://www.mdpi.com/2072-666X/12/11/1401

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