Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is...
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| Format: | Article |
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MDPI AG
2021-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/11/1401 |
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| author | Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee |
| author_facet | Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee |
| author_sort | Jun-Kyo Jeong |
| collection | DOAJ |
| description | In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D<sub>2</sub>) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D<sub>2</sub> annealing. The suggested curing is found to be effective in improving the device reliability. |
| first_indexed | 2024-03-10T05:15:50Z |
| format | Article |
| id | doaj.art-6f43c6382e7747d8b6ace45c84bd2542 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T05:15:50Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-6f43c6382e7747d8b6ace45c84bd25422023-11-23T00:26:59ZengMDPI AGMicromachines2072-666X2021-11-011211140110.3390/mi12111401Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash MemoryJun-Kyo Jeong0Jae-Young Sung1Woon-San Ko2Ki-Ryung Nam3Hi-Deok Lee4Ga-Won Lee5Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaIn this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D<sub>2</sub>) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D<sub>2</sub> annealing. The suggested curing is found to be effective in improving the device reliability.https://www.mdpi.com/2072-666X/12/11/1401SONOSflash memorypoly siliconroughnessdata retentionatomic force microscope (AFM) |
| spellingShingle | Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory Micromachines SONOS flash memory poly silicon roughness data retention atomic force microscope (AFM) |
| title | Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory |
| title_full | Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory |
| title_fullStr | Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory |
| title_full_unstemmed | Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory |
| title_short | Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory |
| title_sort | physical and electrical analysis of poly si channel effect on sonos flash memory |
| topic | SONOS flash memory poly silicon roughness data retention atomic force microscope (AFM) |
| url | https://www.mdpi.com/2072-666X/12/11/1401 |
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