Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the...

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Bibliographic Details
Main Authors: Ahmed S. Razeen, Dharmraj Kotekar‐Patil, Mengting Jiang, Eric X. Tang, Gao Yuan, Jesper Ong, Viet C. Wyen, K. Radhakrishnan, Sudhiranjan Tripathy
Format: Article
Language:English
Published: Wiley-VCH 2024-03-01
Series:Advanced Materials Interfaces
Subjects:
AlGaN/GaN HEMT
MSM
nanoholes
nanophotonics
UV Photodetectors
Online Access:https://doi.org/10.1002/admi.202300726

Internet

https://doi.org/10.1002/admi.202300726

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