Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-03-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202300726 |
| _version_ | 1797248815921627136 |
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| author | Ahmed S. Razeen Dharmraj Kotekar‐Patil Mengting Jiang Eric X. Tang Gao Yuan Jesper Ong Viet C. Wyen K. Radhakrishnan Sudhiranjan Tripathy |
| author_facet | Ahmed S. Razeen Dharmraj Kotekar‐Patil Mengting Jiang Eric X. Tang Gao Yuan Jesper Ong Viet C. Wyen K. Radhakrishnan Sudhiranjan Tripathy |
| author_sort | Ahmed S. Razeen |
| collection | DOAJ |
| description | Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology. |
| first_indexed | 2024-04-24T20:20:35Z |
| format | Article |
| id | doaj.art-6f4ebe9ff02942e78accfb04cca34f2c |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-04-24T20:20:35Z |
| publishDate | 2024-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-6f4ebe9ff02942e78accfb04cca34f2c2024-03-22T08:17:41ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-03-01119n/an/a10.1002/admi.202300726Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole PatterningAhmed S. Razeen0Dharmraj Kotekar‐Patil1Mengting Jiang2Eric X. Tang3Gao Yuan4Jesper Ong5Viet C. Wyen6K. Radhakrishnan7Sudhiranjan Tripathy8Center for Micro/Nano‐electronics (CMNE) School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 SingaporeAgency for Science Technology and Research (A*STAR) Institute of Materials Research and Engineering (IMRE) 2 Fusionopolis Way, Innovis #08‐03 Singapore 138634 Republic of SingaporeAgency for Science Technology and Research (A*STAR) Institute of Materials Research and Engineering (IMRE) 2 Fusionopolis Way, Innovis #08‐03 Singapore 138634 Republic of SingaporeAgency for Science Technology and Research (A*STAR) Institute of Materials Research and Engineering (IMRE) 2 Fusionopolis Way, Innovis #08‐03 Singapore 138634 Republic of SingaporeIGSS Ventures Pte Ltd 5 International Business Park, #02‐07A Mewah Building Singapore 609914 Republic of SingaporeIGSS Ventures Pte Ltd 5 International Business Park, #02‐07A Mewah Building Singapore 609914 Republic of SingaporeIGSS Ventures Pte Ltd 5 International Business Park, #02‐07A Mewah Building Singapore 609914 Republic of SingaporeCenter for Micro/Nano‐electronics (CMNE) School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 SingaporeAgency for Science Technology and Research (A*STAR) Institute of Materials Research and Engineering (IMRE) 2 Fusionopolis Way, Innovis #08‐03 Singapore 138634 Republic of SingaporeAbstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.https://doi.org/10.1002/admi.202300726AlGaN/GaN HEMTMSMnanoholesnanophotonicsUV Photodetectors |
| spellingShingle | Ahmed S. Razeen Dharmraj Kotekar‐Patil Mengting Jiang Eric X. Tang Gao Yuan Jesper Ong Viet C. Wyen K. Radhakrishnan Sudhiranjan Tripathy Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning Advanced Materials Interfaces AlGaN/GaN HEMT MSM nanoholes nanophotonics UV Photodetectors |
| title | Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning |
| title_full | Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning |
| title_fullStr | Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning |
| title_full_unstemmed | Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning |
| title_short | Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning |
| title_sort | enhanced performance of metal semiconductor metal uv photodetectors on algan gan hemt structure via periodic nanohole patterning |
| topic | AlGaN/GaN HEMT MSM nanoholes nanophotonics UV Photodetectors |
| url | https://doi.org/10.1002/admi.202300726 |
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