Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM
By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5051813 |