Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM
By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5051813 |
| _version_ | 1818155155147718656 |
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| author | Binghai Liu Zhi Li Dong Younan Hua Chao Fu Xiaomin Li Pik Kee Tan Yuzhe Zhao |
| author_facet | Binghai Liu Zhi Li Dong Younan Hua Chao Fu Xiaomin Li Pik Kee Tan Yuzhe Zhao |
| author_sort | Binghai Liu |
| collection | DOAJ |
| description | By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradation of silicon nitride process layers, i.e. thin-downing of nanostructured silicon nitride, inter-diffusion of O and N, the formation of bubble-like defects and segregation of N at neighbouring interfaces. Further detailed analysis revealed that radiation-induced modification in the microstructure and chemical composition of silicon nitride layers could be ascribed to the electron radiation induced knock-on damage and ionization damage. The radiation enhanced diffusion (RED) accounted for the continuous thin-down of the nitride process layer and the formation of bubble-like defects in thick nitride spacer process layers. The work well demonstrated the electron-beam sensitivity of nanostructured silicon nitride materials in the semiconductor devices, and thus may give useful information about electron-dose control during TEM failure analysis of the semiconductor devices containing nanostructured silicon nitride process layers. |
| first_indexed | 2024-12-11T14:37:54Z |
| format | Article |
| id | doaj.art-6f56e835d12142789c42c12c8151ced4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T14:37:54Z |
| publishDate | 2018-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6f56e835d12142789c42c12c8151ced42022-12-22T01:02:05ZengAIP Publishing LLCAIP Advances2158-32262018-11-01811115327115327-1110.1063/1.5051813098811ADVElectron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEMBinghai Liu0Zhi Li Dong1Younan Hua2Chao Fu3Xiaomin Li4Pik Kee Tan5Yuzhe Zhao6Wintech Nano-Technology Service Pte Ltd, 117684, SingaporeSchool of Materials Science & Engineering, College of Engineering, Nangyang Technologic University, 639798, SingaporeWintech Nano-Technology Service Pte Ltd, 117684, SingaporeWintech Nano-Technology Service Pte Ltd, 117684, SingaporeWintech Nano-Technology Service Pte Ltd, 117684, SingaporeDepartment of Product, Test and Failure Analysis, Globalfoundries Singapore Pte Ltd, 738406, SingaporeDepartment of Product, Test and Failure Analysis, Globalfoundries Singapore Pte Ltd, 738406, SingaporeBy in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradation of silicon nitride process layers, i.e. thin-downing of nanostructured silicon nitride, inter-diffusion of O and N, the formation of bubble-like defects and segregation of N at neighbouring interfaces. Further detailed analysis revealed that radiation-induced modification in the microstructure and chemical composition of silicon nitride layers could be ascribed to the electron radiation induced knock-on damage and ionization damage. The radiation enhanced diffusion (RED) accounted for the continuous thin-down of the nitride process layer and the formation of bubble-like defects in thick nitride spacer process layers. The work well demonstrated the electron-beam sensitivity of nanostructured silicon nitride materials in the semiconductor devices, and thus may give useful information about electron-dose control during TEM failure analysis of the semiconductor devices containing nanostructured silicon nitride process layers.http://dx.doi.org/10.1063/1.5051813 |
| spellingShingle | Binghai Liu Zhi Li Dong Younan Hua Chao Fu Xiaomin Li Pik Kee Tan Yuzhe Zhao Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM AIP Advances |
| title | Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM |
| title_full | Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM |
| title_fullStr | Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM |
| title_full_unstemmed | Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM |
| title_short | Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM |
| title_sort | electron beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by tem |
| url | http://dx.doi.org/10.1063/1.5051813 |
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