Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...

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Bibliographic Details
Main Authors: Binghai Liu, Zhi Li Dong, Younan Hua, Chao Fu, Xiaomin Li, Pik Kee Tan, Yuzhe Zhao
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5051813

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