Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy
We have grown a high-quality single-phase M-plane GaN on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy. The Hooke’s law for M-plane GaN was derived by a stress tenor transformation. From the analysis of M-plane GaN microstructure, the lattice strain of M-plane GaN along the [112¯0] and [0...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5037006 |