Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films
BiFeO3 based resistive random access memory (RRAM) devices are fabricated using a low-cost solution process to study the effect of an Al top electrode on switching behavior and reliability. Fabricated devices demonstrated bipolar switching characteristics with a moderate Ion/Ioff ratio, set and rese...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5134972 |