Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design
Novel In0.12Al0.88N/AlN/AlxGa<inline-formula> <tex-math notation="LaTeX">$_{1-\mathrm {x}}\text{N}$ </tex-math></inline-formula>/In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10488413/ |