Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Novel In0.12Al0.88N/AlN/AlxGa<inline-formula> <tex-math notation="LaTeX">$_{1-\mathrm {x}}\text{N}$ </tex-math></inline-formula>/In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-...

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Bibliographic Details
Main Authors:	Jian-Hong Ke, Ching-Sung Lee, Han-Yin Liu, Jung-Hui Tsai, Wei-Chou Hsu
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Series:	IEEE Access
Subjects:	Symmetrically-graded channel wide-gap AlGaN channel InAlN back-barrier MOS-HFET Al₂O₃ ultrasonic spray pyrolysis deposition
Online Access:	https://ieeexplore.ieee.org/document/10488413/

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