Spin relaxation induced by interfacial effects in GaN/Al0.25Ga0.75N heterostructures

Spin relaxation induced by interfacial effects in GaN/Al0.25Ga0.75N heterostructures

Spin relaxation induced by the interfacial effects in GaN/Al0.25Ga0.75N heterostructures was carefully investigated using a photon-energy-dependent time-resolved Kerr rotation spectrum. The existence of the interfacial localized states with potential fluctuations at the GaN/AlGaN heterointerface lea...

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Dettagli Bibliografici
Autori principali: Shixiong Zhang, Ning Tang, Xiaoyue Zhang, Xingchen Liu, Lei Fu, Yunfan Zhang, Teng Fan, Zhenhao Sun, Fentao Wang, Weikun Ge, Bo Shen
Natura: Articolo
Lingua:English
Pubblicazione: KeAi Communications Co. Ltd. 2021-11-01
Serie:Fundamental Research
Soggetti:
GaN/AlGaN heterointerface
Two-dimensional electron gas
Interfacial localized state
Spin dynamics
Polarization field
Accesso online:http://www.sciencedirect.com/science/article/pii/S2667325821002077

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http://www.sciencedirect.com/science/article/pii/S2667325821002077

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