Experimental and numerical studies on the power RF N-LDMOS transistor under cold and hot thermal shock tests based aging mechanism

This paper describes a new methodology to initiate a thermal accelerated aging test, and identify the key parameters affecting the reliability of a power RF N-LDMOS transistor. The method is based on two aging techniques namely cold and hot thermal shock tests (TST, air-air test), carried out at dif...

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Bibliographic Details
Main Authors: M.A. Belaïd, A. Nahhas
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:Results in Engineering
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590123023001305