Experimental and numerical studies on the power RF N-LDMOS transistor under cold and hot thermal shock tests based aging mechanism
This paper describes a new methodology to initiate a thermal accelerated aging test, and identify the key parameters affecting the reliability of a power RF N-LDMOS transistor. The method is based on two aging techniques namely cold and hot thermal shock tests (TST, air-air test), carried out at dif...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-03-01
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Series: | Results in Engineering |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123023001305 |