In situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronic devices, while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0155869 |