Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm<sup>3</sup> high-pressure, high...

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Bibliographic Details
Main Authors: Ruozheng Wang, Fang Lin, Gang Niu, Jianing Su, Xiuliang Yan, Qiang Wei, Wei Wang, Kaiyue Wang, Cui Yu, Hong-Xing Wang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/15/2/444