Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation
A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm<sup>3</sup> high-pressure, high...
Main Authors: | , , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-01-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/2/444 |