Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

Ga2O3 has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In1−xGax)2O3 thin film grown on an ε-GaFeO3 substrate via the mist chemical vapor deposition process. The...

Full description

Bibliographic Details
Main Authors: Hiroyuki Nishinaka, Osamu Ueda, Noriaki Ikenaga, Noriyuki Hasuike, Masahiro Yoshimoto
Format: Article
Language:English
Published: Elsevier 2022-06-01
Series:Materials Letters: X
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590150822000291