Low Power Consumption Gate-Tunable WSe<sub>2</sub>/SnSe<sub>2</sub> van der Waals Tunnel Field-Effect Transistor

Low Power Consumption Gate-Tunable WSe<sub>2</sub>/SnSe<sub>2</sub> van der Waals Tunnel Field-Effect Transistor

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe<sub>2</sub>/SnSe<sub>2</sub> va...

Full description

Bibliographic Details
Main Authors: Abdelkader Abderrahmane, Changlim Woo, Pil-Ju Ko
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Electronics
Subjects:
two-dimensional materials
transition-metal dichalcogenides
black phosphorus
hexagonal boron nitride
tungsten diselenide
tin diselenide
Online Access:https://www.mdpi.com/2079-9292/11/5/833

Internet

https://www.mdpi.com/2079-9292/11/5/833

Similar Items