| Summary: | Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe<sub>2</sub>/SnSe<sub>2</sub> van der Waals (vdW) tunnel field-effect transistor (TFET), where hexagonal boron nitride (h-BN) was used as the gate insulator. We performed morphological, electrical, and optoelectronic characterizations. The p-WSe<sub>2</sub>/n-SnSe<sub>2</sub> heterostructure-based TFET exhibited <i>p</i>-type behavior with a good dependence on the gate voltage. The TFET device showed a trend toward negative differential resistance (NDR) originating from band-to-band tunneling, which can be tuned by applying a gate voltage. The optoelectronic performance of the TFET device was low, with a maximum photoresponsivity of 11 mA W<sup>−1</sup>, owing to the large device length. The results obtained herein promote the integration of black phosphorus into low-energy-consumption 2D vdW TFETs.
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