Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization

Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization

The integrated gate commutated thyristor (IGCT) is a high-power semiconductor device with excellent performance, whose operating characteristics are governed by the clamp circuit. In order to further optimize the operating characteristics of IGCT, a bi-objective nonlinear optimization strategy based...

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Bibliographic Details
Main Authors: Tao Jiang, Xiaotao Han, Shaozhe Zhang
Format: Article
Language:English
Published: Elsevier 2022-08-01
Series:Energy Reports
Subjects:
IGCT
Clamp circuit
Loss analysis
Behavior model
Multi-objective optimization
Online Access:http://www.sciencedirect.com/science/article/pii/S2352484722003857

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http://www.sciencedirect.com/science/article/pii/S2352484722003857

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