Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization

The integrated gate commutated thyristor (IGCT) is a high-power semiconductor device with excellent performance, whose operating characteristics are governed by the clamp circuit. In order to further optimize the operating characteristics of IGCT, a bi-objective nonlinear optimization strategy based...

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Main Authors: Tao Jiang, Xiaotao Han, Shaozhe Zhang
Format: Article
Language:English
Published: Elsevier 2022-08-01
Series:Energy Reports
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352484722003857
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author Tao Jiang
Xiaotao Han
Shaozhe Zhang
author_facet Tao Jiang
Xiaotao Han
Shaozhe Zhang
author_sort Tao Jiang
collection DOAJ
description The integrated gate commutated thyristor (IGCT) is a high-power semiconductor device with excellent performance, whose operating characteristics are governed by the clamp circuit. In order to further optimize the operating characteristics of IGCT, a bi-objective nonlinear optimization strategy based on IGCT turn-off switching losses and clamp circuit transition time is proposed in this paper, by which the clamp circuit parameters can be obtained quickly and comprehensively. The results show that IGCT turn-off voltage drop and oscillation would be suppressed, and the IGCT turn-off and clamp circuit power losses could also be reduced, which ensures the safe operation of the IGCT and minimizes the impact on the dynamic performance of the power electronics converter based on IGCT in the meantime.
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spelling doaj.art-7063eb1b0f1943f29751823da55c2c592022-12-22T03:16:29ZengElsevierEnergy Reports2352-48472022-08-018428436Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimizationTao Jiang0Xiaotao Han1Shaozhe Zhang2Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, ChinaWuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, ChinaCorresponding author.; Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, ChinaThe integrated gate commutated thyristor (IGCT) is a high-power semiconductor device with excellent performance, whose operating characteristics are governed by the clamp circuit. In order to further optimize the operating characteristics of IGCT, a bi-objective nonlinear optimization strategy based on IGCT turn-off switching losses and clamp circuit transition time is proposed in this paper, by which the clamp circuit parameters can be obtained quickly and comprehensively. The results show that IGCT turn-off voltage drop and oscillation would be suppressed, and the IGCT turn-off and clamp circuit power losses could also be reduced, which ensures the safe operation of the IGCT and minimizes the impact on the dynamic performance of the power electronics converter based on IGCT in the meantime.http://www.sciencedirect.com/science/article/pii/S2352484722003857IGCTClamp circuitLoss analysisBehavior modelMulti-objective optimization
spellingShingle Tao Jiang
Xiaotao Han
Shaozhe Zhang
Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
Energy Reports
IGCT
Clamp circuit
Loss analysis
Behavior model
Multi-objective optimization
title Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
title_full Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
title_fullStr Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
title_full_unstemmed Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
title_short Design strategy of IGCT clamp circuit parameters based on bi-objective nonlinear optimization
title_sort design strategy of igct clamp circuit parameters based on bi objective nonlinear optimization
topic IGCT
Clamp circuit
Loss analysis
Behavior model
Multi-objective optimization
url http://www.sciencedirect.com/science/article/pii/S2352484722003857
work_keys_str_mv AT taojiang designstrategyofigctclampcircuitparametersbasedonbiobjectivenonlinearoptimization
AT xiaotaohan designstrategyofigctclampcircuitparametersbasedonbiobjectivenonlinearoptimization
AT shaozhezhang designstrategyofigctclampcircuitparametersbasedonbiobjectivenonlinearoptimization