Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Abstract Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO...

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Bibliographic Details
Main Authors: Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin
Format: Article
Language:English
Published: Wiley-VCH 2023-10-01
Series:Advanced Electronic Materials
Subjects:
electrode/HZO interfaces
ferroelectricity
HZO
thin‐films
Online Access:https://doi.org/10.1002/aelm.202300171

Internet

https://doi.org/10.1002/aelm.202300171

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