Erbium energy levels in GaN grown by hydride vapor phase epitaxy
Erbium doped GaN (Er:GaN) is a promising candidate as a novel gain medium for solid-state high energy lasers (HELs) due to its superior physical properties over a synthetic garnet such as Nd:YAG. Er:GaN emits in the 1.5 µm region, which is retina-safe and has a high transmission in the air. We repor...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0028470 |