Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`

Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`

Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on the scalability and variability of these dopant p...

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Bibliographic Details
Main Authors: Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Heterostructures
tunnel transistors
TFET
Online Access:https://ieeexplore.ieee.org/document/8357842/

Internet

https://ieeexplore.ieee.org/document/8357842/

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