Analyzing Transfer Characteristics of Disordered Polymer Field-Effect Transistors for Intrinsic Device Parameter Extraction
In this study, we present an intrinsic device parameter method based on a single device for disordered polymer field-effect transistors (PFETs). Charges in disordered polymer semiconductors transport through localized states via thermally activated hopping, of which field-effect mobility and contact...
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Format: | Article |
Language: | English |
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MDPI AG
2023-07-01
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Series: | Crystals |
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Online Access: | https://www.mdpi.com/2073-4352/13/7/1075 |