Analyzing Transfer Characteristics of Disordered Polymer Field-Effect Transistors for Intrinsic Device Parameter Extraction

In this study, we present an intrinsic device parameter method based on a single device for disordered polymer field-effect transistors (PFETs). Charges in disordered polymer semiconductors transport through localized states via thermally activated hopping, of which field-effect mobility and contact...

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Bibliographic Details
Main Author: Minho Yoon
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/13/7/1075

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