Engineering of electronic and optical properties of monolayer gallium sulfide/selenide in presence of intrinsic atomic defects
In this paper, the electronic and optical properties of various point defects in gallium sulfide (GaS) and gallium selenide (GaSe) are studied. Various vacancy defects in each monolayer GaX (X = S, Se) include V _X , V _Ga , 2V _X , 2V _Ga , 1V _Ga 1V _X , 1V _Ga 2V _X , 2V _Ga 1V _X , 2V _Ga 2V _X...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab69ca |