Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET
This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-...
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
Hindawi Limited
2016-01-01
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| Colecção: | Active and Passive Electronic Components |
| Acesso em linha: | http://dx.doi.org/10.1155/2016/6068171 |