Electron mobility enhancement in n-GaN under Ohmic-metal
We investigated the electron transport properties of n-GaN under an Ohmic-metal. Hall measurement results were compared for n-GaN (A) before Ti-based metal deposition, (B) after Ti-based metal deposition but before annealing, (C) after Ohmic annealing, and (D) after Ohmic-metal removal, where multi-...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0147137 |