Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity
The effect of thermal treatment on the behavior of samarium atoms introduced into silicon during the growth process was studied using the method of transient capacitive deep-level spectroscopy (DLTS). It has been shown that various high-temperature treatments lead to the activation of samarium atom...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2023-12-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22580 |