Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications

Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications

Hafnium oxide (HfO2) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO2 films on Si. In this study, ultrathin films of HfO2 in the range of 15–70 nm were deposited on p-Si and Au...

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Bibliographic Details
Main Authors: Laurynas Staišiūnas, Putinas Kalinauskas, Eimutis Juzeliūnas, Asta Grigucevičienė, Konstantinas Leinartas, Gediminas Niaura, Sandra Stanionytė, Algirdas Selskis
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-03-01
Series:Frontiers in Chemistry
Subjects:
silicon
passivation
photoelectrochemistry
hafnium oxide
nanogravimetry
hydrogen photogeneration
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2022.859023/full

Internet

https://www.frontiersin.org/articles/10.3389/fchem.2022.859023/full

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