High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and struct...
| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
Wiley
1987-01-01
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| Colecção: | Active and Passive Electronic Components |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1155/1987/49720 |