Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices
Germanium (Ge) is a promising semiconductor as an alternative channel material to enhance performance in scaled silicon (Si) field-effect transistor (FET) devices. The gate stack of Ge FETs has been much improved based on extensive research thus far, demonstrating that the performance of Ge FETs is...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-08-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/15/2419 |