Low-power resistive random access memory by confining the formation of conducting filaments
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated betwe...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4954974 |