hBN Encapsulation Effects on the Phonon Modes of MoS2 with a Thickness of 1 to 10 Layers

hBN Encapsulation Effects on the Phonon Modes of MoS2 with a Thickness of 1 to 10 Layers

Abstract Interfaces with surrounding materials, where charged impurities and surface roughness are present, have a significant impact on the electrical and optical properties of 2D materials. In the change of the phonon modes of MoS2 accompanied by thickness variation, the portion caused by intrinsi...

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Bibliographic Details
Main Authors: Duk Hyun Lee, Nam‐Hee Kim, Suyong Jung, Jaesung Park, Bum‐Kyu Kim, Myung‐Ho Bae, Yong Ju Yun, Sam Nyung Yi, Dong Han Ha
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Materials Interfaces
Subjects:
hBN encapsulation
interface effect
MoS 2
Raman spectroscopy
vdW interlayer interaction
Online Access:https://doi.org/10.1002/admi.202300002

Internet

https://doi.org/10.1002/admi.202300002

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