Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

In this work, low-temperature Schottky source/drain (S/D) MOSFETs are investigated as the top-tier devices for 3D sequential integration. Complementary Schottky S/D FinFETs are successfully fabricated with a maximum processing temperature of 500 °C. Through source/drain extension (SDE) engineering,...

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Bibliographic Details
Main Authors: Shujuan Mao, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, Yanna Luo, Lei Cao, Ran Zhang, Haochen Liu, Xun Li, Yongliang Li, Zhenhua Wu, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang, Huaxiang Yin
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
3D sequential integration
low thermal budget
Schottky S/D FinFETs
inverter
Online Access:https://www.mdpi.com/2079-4991/12/7/1218

Internet

https://www.mdpi.com/2079-4991/12/7/1218

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