A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P<sup>+</sup>-Pocket and InAlAs-Block

A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P<sup>+</sup>-Pocket and InAlAs-Block

To give consideration to both chip density and device performance, an In<sub>0.53</sub>Ga<sub>0.47</sub>As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P<sup>+</sup>-pocket and an In<sub>0.52</sub>Al<sub>0.48<...

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Bibliographic Details
Main Authors: Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, Yao Li
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
tunnel field effect transistor
line tunneling
P<sup>+</sup>-pocket
InGaAs/InAlAs
Online Access:https://www.mdpi.com/2072-666X/14/11/2049

Internet

https://www.mdpi.com/2072-666X/14/11/2049

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