A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P<sup>+</sup>-Pocket and InAlAs-Block
To give consideration to both chip density and device performance, an In<sub>0.53</sub>Ga<sub>0.47</sub>As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P<sup>+</sup>-pocket and an In<sub>0.52</sub>Al<sub>0.48<...
Main Authors: | Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, Yao Li |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-10-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/14/11/2049 |
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