Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman...

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Bibliographic Details
Main Authors: Goloudina S.I., Luchinin V.V., Pasyuta V.M., Panov M.F., Smirnov A.N., Kirilenko D.A., Semenova T.F., Sklizkova V.P., Gofman I.V., Svetlychnyi V.M., Kudryavtsev V.V.
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:MATEC Web of Conferences
Online Access:https://doi.org/10.1051/matecconf/20179804002

Internet

https://doi.org/10.1051/matecconf/20179804002

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