Non-local architecture for spin current manipulation in silicon platforms

We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally generated at the indirect gap of bulk Si by means of circularly polarized light and then detected by exploiting the inverse spin-Hall effect (I...

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Bibliographic Details
Main Authors: C. Zucchetti, F. Scali, P. Grassi, M. Bollani, L. Anzi, G. Isella, M. Finazzi, F. Ciccacci, F. Bottegoni
Format: Article
Language:English
Published: AIP Publishing LLC 2023-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0130759