Non-local architecture for spin current manipulation in silicon platforms
We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally generated at the indirect gap of bulk Si by means of circularly polarized light and then detected by exploiting the inverse spin-Hall effect (I...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-02-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0130759 |