Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device
In this letter, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of a transistor. The newly developed B-Te-based device shows excellent characteristics such as low operating voltage, low leakag...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8412090/ |